A novel diode string-triggered gated-Pi N junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor(CMOS) technology, is proposed in this paper. An embedded gated-Pi N junction structure is employed to reduce the diode string leakage current to 13 n A/μm in a temperature range from 25°C to 85°C. To provide the effective electrostatic discharge(ESD) protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number. An novel diode string-triggered gated-Pi N junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor (CMOS) technology, is proposed in this paper. the diode string leakage current to 13 n A / μm in a temperature range from 25 ° C to 85 ° C. To provide the effective electrostatic discharge (ESD) protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.