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概述 今天,电子学正向固体化、微细化、集成化和高可靠方向发展,其发展的支柱是半导体及集成电路。离子刻蚀、等离子刻蚀、反应离子刻蚀及反应等离子刻蚀是微细加工技术的一个分支即干法腐蚀技术。 一般说,微细加工技术可分为横向和纵向加工技术。现在,图形的产生一般仍以光学曝光方式为主,随着加工工艺向微细化发展,线条愈来愈窄,光学曝光的分辨率受到衍射效应的限制。为了获得更细的线条,必须采用波长更短的电子束和X射线曝光。因此,随着加工线条的变窄,原来采用化学液体腐蚀的方法已不能满足要求。这是由于化学液体的钻蚀作用难于腐蚀出完美的细线条。当腐蚀线条达到2—3μm以下时,必须采用干法腐蚀工艺。
Overview Today, electronics is moving towards solidification, miniaturization, integration and high reliability. Its development is dominated by semiconductors and integrated circuits. Ion etching, plasma etching, reactive ion etching and reactive plasma etching is a branch of micro-processing technology that is dry etching technology. In general, micro-processing technology can be divided into horizontal and vertical processing technology. At present, the pattern generation is still mainly based on the optical exposure method. As the processing technology becomes finer, the lines are narrower and the resolution of the optical exposure is limited by the diffraction effect. In order to obtain finer lines, shorter wavelength electron beam and X-ray exposure must be used. Therefore, with the narrowing of processing lines, the original method of using chemical liquid corrosion has been unable to meet the requirements. This is due to the corrosive effect of chemical liquids is difficult to corrode the perfect fine lines. When the corrosion line to reach 2-3μm below, you must use dry etching process.