建立了SiGeHBT基区渡越时间与基区Ge组分任意剖面分布的分析模型 ,模拟分析了它们之间的关系 ,得到了获得最小基区渡越时间的基区Ge组分剖面函数 .结果表明 ,优化的Ge组分剖面在基区从发射结处正比于 xα 增加 ,到x0 点时 ,Ge组分达峰值 ,并保持到收集结处 .α是大于 1的数 ,随基区中收集结侧相对发射结侧禁带变化量的增加而减小 ,x0 随基区禁带变化量的增加而向收集结方向移动 The analytical model of SiGeHBT transit time and arbitrary section distribution of Ge component in basement was established, and the relationship between them was simulated and analyzed, and the Ge section composition function of basement obtained the minimum base transit time was obtained. , The optimized Ge component profile increases in proportion to the xα from the emitter junction at the base and reaches the peak at x0 and remains at the collector junction.α is a number greater than 1 and increases with the collector junction Side relative to the emission side of the junction forbidden band increases the amount of change decreases, x0 with the base area forbidden band changes in the amount of increase toward the collection junction direction