An electroluminescence (EL) device is investigated by using boron and nitrogen double-doped diamond films.The characteristics of the EL spectrum and the dependence of EL intensity on boron and nitrogen impurity are investigated. The experiment indicated that the intensity of EL increases obviously and the threshold voltage decreases with increasing nitrogen impurity within our doped level. Meanwhile the highest emission line changes from the blue region (peaks at 470nm) to the yellow region (peaks at 584nm).