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美国奥克一里季国立研究所,正进行用激光照射硅片以去除半导体硅片表面的杂质(特别是碳和氧)的试验(齐勒等,《Applied physics letters》.Vol 36,№.1,PP.56～59,1980.1,1)。 以往,要使半导体硅片表面保持清洁,是在高真空室内把硅片表面进行物理性溅射,这样可以赶走表面污染物,同时又可以加热吸附在表面的污染物而使其剥离。但是由于表面受到损伤,所以经此处理后必须进行高温退火。而且这种处理与退火工艺必须反复进行,要花去几小时到几天的时间。 对硅片照射脉冲形式激光,可以说就
The National Oakland Institute of the United States quarter, are conducting laser irradiation of silicon to remove impurities on the surface of semiconductor wafers (especially carbon and oxygen) (Ziller et al., “Applied Physics Letters”. Vol 36, №. 1, pp. 56-59, 1980.1, 1). In the past, to keep the surface of the semiconductor wafer clean, the surface of the silicon wafer was physically sputtered in a high vacuum chamber to remove surface contaminants and at the same time to heat the surface contaminants to peel off. However, due to the surface damage, so after this treatment must be high-temperature annealing. And this treatment and annealing process must be repeated, it takes a few hours to a few days time. Irradiation of laser pulses in the form of silicon can be said