论文部分内容阅读
Y99-61590-7 0001111光刻距离的测量对双极晶体管匹配的影响=Measure-ment of lithographical proximity effects on matching ofbipolar transistors[会,英]/Tuinhout,H.P.& Peters,W.C.M.//1998 IEEE International Conference on Mi-croelectronic Test Structures.—7～12(AZ)本文描述了一种测量方法,它用于在亚25μVσ_(△vbc)范围或少于0.1%σ_(△IC/IC)的集电极电流失配的非常准确的双极晶体管匹配特征分析。该方法的敏感度通过
Y99-61590-7 0001111 Influence of Lithography Distance on Bipolar Transistor Matching = Measure-ment of lithographical proximity effects on matching of bipolar transistors [TU, UK] / Tuinhout, HP & Peters, WCM // 1998 IEEE International Conference on Mi-croelectronic Test Structures.-7 ~ 12 (AZ) Described herein is a method of measurement for collector current mismatch in the sub 25 μVσ - (Δvbc) range or less than 0.1% σ_ (Δ IC / IC) Very accurate bipolar transistor matching characterization. The sensitivity of the method is passed