目前,SiH_2Cl_2作为优质源材料在外延工艺中的应用日益广泛,可用于沉积多晶硅、无定形硅和氮化硅等,是研制集成电路的一种重要材料。很多研究工作者论述了以含氮原子功能团的非可溶性固体催化剂进行SiHCl_3岐化制取SiH_2Cl_2工艺。本文报导实验室条件下进行SiHCl_3岐化研究的若干结果。 At present, SiH_2Cl_2 is widely used in epitaxial processes as a high quality source material and can be used to deposit polycrystalline silicon, amorphous silicon and silicon nitride, which is an important material for the development of integrated circuits. Many researchers discussed the SiH 2 Cl 2 process with SiHCl 3 disproportionation by using non-soluble solid catalyst containing nitrogen atom functional groups. This paper reports several results of SiHCl_3 disproportionation studies under laboratory conditions.