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包括深中心发光在内的MOCVD-InP的低温光致发光光谱,表明了非故意掺杂外延层较高的纯度,初步判別了可能引入的杂质,并证明了电学测量与光学测量的一致性。
The low temperature photoluminescence (PLD) spectrum of MOCVD-InP, including deep center emission, indicates the higher purity of the unintentionally doped epitaxial layer. The possible impurities are initially identified and the consistency between the electrical and optical measurements is demonstrated.