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The P type semiconducting polymer polianiline (PAn) films have been prepared on n and p type si chips by photo-electrochemical and electrochemical polymerization, and so the semiconducting polymer PAn/silicon heterojunctions have been fabricated. The I dark-V and I photo-V curves, as well as C-V curves at different frequencies have been measured and the energy band diagrams, the distributions of impurity density and the interface states have been analyzed for the heterojunctions. It is demonstrated experimentally that the n-p Si-PAn heterojunction possesses fine photoelectrical characteristics.
The P type semiconducting polymers polianiline (PAn) films have been prepared on n and p type si chips by photo-electrochemical and electrochemical polymerization, and so the semiconducting polymer PAn / silicon heterojunctions have been fabricated. The I dark-V and I photo- V curves, as well as CV curves at different frequencies have been measured and the energy band diagrams, the distributions of impurity density and the interface states have been analyzed for the heterojunctions. It is demonstrated experimentally that the np Si-PAn heterojunction possesses fine photoelectrical characteristics.