以中心波长为650nm的氮化镓LED外延片为研究对象,提出了一种反射式表面等离激元增强型LED来提高其发光效率。该结构包含依次覆盖在正弦起伏的p型GaN层上的一层低折射率的SiO2膜与一层Ag膜。银膜用来增强内量子效率,而SiO2层能进一步提高GaN层上表面的反射率,同时通过优化蓝宝石衬底的厚度使得GaN层下方的透射率较高,从而得到了较大的发光效率。 Taking the gallium nitride LED epitaxial wafer with the central wavelength of 650nm as the research object, a kind of reflective surface plasmon enhanced LED is proposed to improve its luminous efficiency. The structure comprises a layer of low refractive index SiO2 film and a layer of Ag film sequentially covering the sinusoidal undoped p-type GaN layer. The silver film is used to enhance the internal quantum efficiency, and the SiO2 layer can further improve the reflectivity of the upper surface of the GaN layer. Meanwhile, by optimizing the thickness of the sapphire substrate, the transmissivity under the GaN layer is higher and a larger luminous efficiency is obtained.