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西班牙Graphenea公司2014年7月25日宣布,与日本立命馆大学等共同实现了GaN结晶在硅(100)面上的生长。其要点在于用石墨烯作为中间层。;该技术的开发方为日本立命馆大学理工学部电子光信息工学科荒木努和名西Ya-sushi的研究室、美国麻省理工学院(MIT)、韩国首尔大学(SeoulNationalUni-versity)、韩国东国大学(DonggukUniversity)及西班牙Graphenea公司。在硅(100)面上直接生长缺陷少的GaN结晶时非常困难,几乎没有成功先例。以前在GaN-on-Si技术方面取得实用化进展的,主要是在硅(111)面上生长
Graphenea of Spain announced on July 25, 2014 that the growth of GaN crystal on the silicon (100) surface will be realized jointly with Ritsumeikan University in Japan. The point is to use graphene as an intermediate layer. ; The developer of this technology is Ritsumeikan University Department of Electronic and Information Engineering, RIKEN Nuwa West Ya-sushi laboratory, the United States Massachusetts Institute of Technology (MIT), Seoul National University (SeoulNationalUni-versity), South Korea East China University (DonggukUniversity) and the Spanish company Graphenea. It is very difficult to grow GaN crystal with few defects directly on the silicon (100) surface, with few success precedents. In the past, GaN-on-Si technology has made practical progress, mainly in the silicon (111) surface growth