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优化设计了 1.5 5 μm In Ga As P/In Ga As P张应变量子阱偏振不灵敏半导体光放大器的结构 .利用 k· p方法计算了多量子阱的价带结构 ,计算中考虑了 6× 6有效质量哈密顿量 .从阱宽、应变、注入载流子密度等方面计算了量子阱模式增益的偏振相关性 .
The structure of a 1.55 μm GaAs P / In Ga As P strain-insensitive semiconductor optical amplifier is optimized. The valence band structure of the multi-quantum well is calculated by k · p method. Considering the 6 × 6 The effective mass Hamiltonian is calculated from the well width, strain, injected carrier density and other aspects of the quantum well mode gain polarization correlation.