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石墨烯因其奇特的能带结构和优异的物理性能而成为近年来研究的热点,但是目前单层石墨烯的质量与尺寸制约了其实际应用的发展.本文采用常压化学气相沉积(CVD)方法,基于铜箔衬底,利用甲烷作为碳源制备了高质量大面积的单层与多层石墨烯.研究发现:高温度、稀薄的甲烷浓度、较短的生长时间以及合适的气体流速是制备高质量、大面积石墨烯的关键.Raman光谱、扫描电子显微镜、透射电子显微镜等表征结果表明:制备的石墨烯主要为单层,仅铜箔晶界处有少量多层石墨烯.电学测试表明CVD制备的石墨烯在低温时呈现出较明显的类半导体特性;薄膜电阻随外界磁场的增大而减小.
Due to its unique band structure and excellent physical properties, graphene has become a hot research area in recent years, but the quality and size of monolayer graphene limit the development of its practical applications.In this paper, atmospheric pressure chemical vapor deposition (CVD) Method based on copper foil substrate and using methane as carbon source to prepare high quality large area monolayer and multilayer graphene.It is found that high temperature, thin methane concentration, short growth time and suitable gas flow rate are The key to the preparation of high quality, large area graphene was characterized by Raman spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results showed that graphene was mainly monolayer and only a small amount of multilayer graphene existed at the grain boundaries of copper foil. It shows that graphene prepared by CVD exhibits obvious semiconducting properties at low temperature. The sheet resistance decreases with the increase of external magnetic field.