用MOVPE方法采取一种两步生长过程生长了未掺杂和Si掺杂的GaN。在生长了一个 2 0nm厚的缓冲层后 ,外延生长了 1 μm厚的立方GaN外延层。利用二次离子质谱测定了掺杂的程度。并用X射线衍射和光致发光测量来表征了未掺杂和Si掺杂GaN的结构和光学质量 A two-step growth process was employed to grow undoped and Si-doped GaN using the MOVPE method. After growing a 20 nm thick buffer layer, a 1 μm-thick cubic GaN epitaxial layer was epitaxially grown. The degree of doping was determined by secondary ion mass spectrometry. X-ray diffraction and photoluminescence measurements were used to characterize the structure and optical quality of undoped and Si-doped GaN