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本文简述了Ⅲ—Ⅴ族化合物半导体薄膜的异质外延中,晶面倾斜的产生和测量方法,列举了VPE生长的Ga_(1-x)In_xAs/GaAs和LPE生长的GaAlAsP/GaAs结构的测量结果。在In含量为0.06—0.48之内,GaInAs异质外延层的倾斜角可达数百秒到1.5°,但GaAlAsP/GaAs的倾斜程度就小得多。实验发现晶面倾斜角随总的晶格失配量的增加而增加,(100)衬底比(110)衬底的倾斜角大,衬底的错向角的大小和方位对外延层的晶面倾斜角亦有较大的影响。
In this paper, the generation and measurement of crystal plane inclination in the heteroepitaxy of III-V compound semiconductor thin films are described briefly. The GaAlAsP / GaAs structure of Ga_ (1-x) In_xAs / GaAs and LPE grown by VPE is given. result. The tilt angle of GaInAs heteroepitaxial layers can reach hundreds of seconds to 1.5 ° with an In content of 0.06-0.48, but the tilt of GaAlAsP / GaAs is much smaller. The experimental results show that the tilt angle of the crystal plane increases with the increase of the total lattice mismatch, and the tilt angle of the (100) substrate is larger than that of the (110) substrate. The size and orientation of the substrate ’ Surface tilt angle also has a greater impact.