B~+注入n(Si)-GaAs层,可以在带间引入与损伤相关的深能级,补偿自由电子,使n型导电层变为高阻层。若注B后退火,在一定的退火条件下,在GRAs晶格的恢复过程中,B占据Ga的位置,形成B_(Ga),并与As空位V_(As)络合形成络合物B_(Ga)V_(As)。由于B_(Ga)V_(As)和Si的相互作用,促使Si占据As的位置,形成受主,从而降低了n(Si)-GaAs层中的载流子浓度。我们认为B注入n(Si)-GaAs层光发光测量中观察到的1.33 eV峰与B,Si相关。 B ~ + implanted n (Si) -GaAs layer can be introduced into the band with the damage-related deep level, to compensate for free electrons, the n-type conductive layer into a high resistance layer. If annealing is performed after annealing at B, B occupies the position of Ga and forms B_ (Ga) in the process of GRAS lattice recovery under a certain annealing condition, and complexes with As vacancy V_ (As) to form complex B_ ( Ga) V_ (As). Due to the interaction of B_ (Ga) V_ (As) and Si, Si is forced to occupy the site of As, forming an acceptor, thereby reducing the carrier concentration in the n (Si) -GaAs layer. We consider that the 1.33 eV peak observed in B-injected n (Si) -GaAs layer photoluminescence measurements correlates with B and Si.