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电荷耦合是适用于中等电压功率MOSFET设计的先进设计理念之一,该设计思想旨在改善器件阻断态下的电场分布从而提高耐压。针对150 V电荷耦合功率MOSFET双外延漂移区(分别为电荷耦合区N1区与非耦合区N2区)电荷匹配问题进行了仿真优化研究,结果表明:N1区和N2区浓度分别约为2.2×1016cm-3和4.5×101 5cm-3时,电场分布更加均匀、耐压更高,且比导通电阻仅为1.306 mΩ·cm2,即击穿电压和比导通电阻间达到最佳匹配。同时,还针对器件不同槽深进行了静态特性和动态特性的整体仿真优化研究,结果表明:槽深在7~9μm时,器件满足耐压要求且击穿电压随双漂移区掺杂浓度匹配程度变化较为平稳。最后,优化结构与传统槽栅MOSFET相比,其栅漏电容和栅电荷大幅降低,器件优值降低了约87%。
Charge-coupled is one of the advanced design concepts for a medium voltage power MOSFET design that aims to improve the field distribution in the blocked state of the device to improve the withstand voltage. The charge-matching problem in the double-exponential drift region (charge-coupled region N1 and non-coupled region N2) of the 150 V charge-coupled power MOSFET is simulated and optimized. The results show that the concentration of N1 and N2 are about 2.2 × 1016 cm -3 and 4.5 × 101 5cm-3, the electric field distribution is more uniform and the breakdown voltage is higher, and the specific on-resistance is only 1.306 mΩ · cm2, which is the best match between the breakdown voltage and the on-resistance. At the same time, the overall simulation and optimization of static and dynamic characteristics of the device at different slot depths are also carried out. The results show that the device meets the requirement of breakdown voltage and the breakdown voltage matches the doping concentration of double drift region Change is more stable. Finally, the gate-drain capacitance and gate charge of the optimized structure are significantly reduced compared to conventional trench-gate MOSFETs, reducing the device’s merit by about 87%.