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为了获得集成的Ga_xIn_(1-x)As_yP_(1-y)/InP激光器,研究了液相外延和湿法化学腐蚀技术。实现了在沟道的(100)InP衬底上GaInAsP层的选择性生长。发现了一种新的化学腐蚀剂,用它腐蚀InP和GaInAsP时,能得到平滑的表面和垂直的断面。利用这种腐蚀技术,制作了断面和条形结构。研究了同质隔离条形(HIS)双异质结激光器。在1.22μm室温振荡波长附近,测得激射波长的色散为±1.2％。还测量了温度与复合寿命τ_s的依赖关系,当温度变化时,发现τ_s∝1/J_(th)~(1/2)。
In order to obtain an integrated Ga_xIn_ (1-x) As_yP_ (1-y) / InP laser, liquid phase epitaxy and wet chemical etching techniques were studied. The selective growth of the GaInAsP layer on the channel’s (100) InP substrate is achieved. A new chemical etchant was discovered that when used to etch InP and GaInAsP yields smooth surface and vertical sections. Using this etching technique, a cross-sectional and bar-shaped structure was produced. The homogeneous isolated strip (HIS) double heterojunction laser was studied. In the vicinity of the 1.22 μm room temperature oscillation wavelength, the dispersion of the lasing wavelength was measured to be ± 1.2%. The dependence of temperature on the composite lifetime τ_s was also measured. When the temperature changes, τ_sα1 / J_ (th) ~ (1/2) is found.