采用射频反应磁控溅射法制备了AlN压电薄膜,并分析了制备条件对AlN薄膜性能的影响。为了确定c轴择优取向生长AlN薄膜的制备工艺参数,设计了关于溅射功率、衬底温度、氮氩体积比和气氛压强这四个参数的工艺实验,研究了不同的工艺条件对AlN薄膜质量的影响。采用X射线衍射(XRD)图谱分析了薄膜的晶格结构和摇摆曲线半高宽,采用原子力显微镜(AFM)表征了薄膜的表面形貌和均方根粗糙度。对不同制备条件下AlN薄膜样品的XRD和AFM测试结果进行了分析和讨论,最终得到了最佳的工艺参数,为下一步研究工作提供了实验依据和奠定了工艺基础。 The AlN piezoelectric films were prepared by radio frequency reactive magnetron sputtering and the influence of preparation conditions on the properties of AlN films was analyzed. In order to determine the preparation parameters of the AlN film grown on the c-axis, the process parameters of sputtering power, substrate temperature, volumetric ratio of nitrogen and argon and the pressure of atmosphere were designed. The effects of different process conditions on the quality of AlN film Impact. The lattice structure and the half width of the rocking curve were analyzed by X-ray diffraction (XRD). The surface morphology and root mean square roughness of the films were characterized by atomic force microscopy (AFM). The results of XRD and AFM tests on AlN film samples under different preparation conditions were analyzed and discussed. Finally, the best process parameters were obtained, which provided the experimental basis and laid the technological foundation for the next research work.