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本文用三种方法制备了掺Bi的CdS光导薄膜。一种方法是将Bi粉和CdS粉均匀混合蒸发;第二种方法是将CdS薄膜在CdS掺杂的Bi气氛中扩散,扩散温度为400～450℃;第三种方法是在CdS膜外再镀上一层很薄的Bi膜。文中介绍了它们的制备条件和光导特性,同时讨论了制备条件与光电导特性的关系。
In this paper, three methods were prepared doped with CdS CdS photoconductive thin films. One method is that Bi powder and CdS powder are uniformly mixed and evaporated; the second method is to diffuse the CdS film in a CdS-doped Bi atmosphere with a diffusion temperature of 400-450 DEG C; and the third method is to remove the CdS film outside of the CdS film Plated with a thin layer of Bi film. In this paper, their preparation conditions and photoconductive properties are introduced. Meanwhile, the relationship between the preparation conditions and photoconductive properties is also discussed.