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报导了一种以多晶硅作发射极并带有隔离环电极，工作时基区处于穿通状态下的新结构硅光电晶体管．用多晶硅作发射极比同结构单晶硅晶体管的光电增益提高了2倍；隔离环电极极大地提高了器件的灵敏度；穿通型的工作状态提高了器件的增益和响应速度．已研制成的这种新型结构的光电晶体管在10V工作电压下，对0．8μm，0．174μW的光增益达到了3083．
A new structured silicon phototransistor with polysilicon as the emitter and a spacer ring electrode and a punch through state is reported. Polysilicon as the emitter of the same structure than the monocrystalline silicon transistor optical gain increased by 2 times; isolated ring electrode greatly enhance the sensitivity of the device; Through-type working conditions to improve the gain and response speed of the device. The newly developed phototransistor, which has been developed, achieves a gain of 3083 at a working voltage of 10V for an optical gain of 0.8μm and 0.174μW.