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随着半导体工艺技术和IC设计技术的飞速发展,硅基滤波器技术也不断更新换代。滤波器传输性能取决于基片介电常数、损耗和厚度等参数。研究了硅基不同厚度、损耗以及掺杂浓度等情况下,中心频率为5.75 GHz附近的平行耦合微带带通滤波器的传输系数和反射系数的频率响应特性。结果表明:当微带线带通滤波器PCB版图确定时,滤波器正向传输系数S21随着基片材料厚度的减小,通频带宽变窄;随着硅掺杂浓度的增加,通带向低频方向偏移;当正切损耗为0.000 4,0.004和0.04时,中心频率处S21分别为-14.18,-2.08和-0.81 dB。理论结果与实验数据进行比较,两者符合较好。
With the rapid development of semiconductor process technology and IC design technology, silicon-based filter technology is constantly updated. Filter transmission performance depends on the substrate dielectric constant, loss and thickness and other parameters. The frequency response characteristics of the transmission coefficient and the reflection coefficient of a parallel coupled microstrip bandpass filter with a center frequency of 5.75 GHz were studied under different thickness, loss and doping concentration of silicon. The results show that when the microstrip line bandpass filter PCB layout is determined, the filter forward transfer coefficient S21 with the substrate material thickness decreases, the pass band width becomes narrower; with the silicon doping concentration increases, the passband To the low frequency direction; when the loss of the tangent is 0.000 4,0.004 and 0.04, the center frequency of S21 were -14.18, -2.08 and -0.81 dB respectively. The theoretical results and experimental data are compared, the two are in good agreement.