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在电子工业中,为了制备低电阻率的Al合金薄膜,需要对薄膜进行退火。虽然材料的电阻率与其电输运性能密切相关,然而到目前为止,对于铝合金薄膜的电输运性能研究甚少。本实验首先利用TEM对于磁控溅射铝合金薄膜的结构,特别是对其与基底界面处的结构进行了表征。在此基础上,利用霍尔效应测试了解界面状态的变化对于霍尔载流子浓度及迁移率的影响。结果表明,在退火过程中,薄膜与基底之间通过扩散形成紧密接触,从而使得合金薄膜同时具有较高的载流子浓度以及载流子迁移率。最后,利用一个新提出的能带模型,解释所观察到的界面变化对于电导率的影响。
In the electronics industry, the thin film needs to be annealed in order to produce a low-resistivity Al alloy film. Although the resistivity of the material is closely related to its electrical transport properties, so far, little is known about the electrical transport properties of aluminum alloy thin films. In this experiment, the structure of the magnetron sputtering aluminum alloy film, especially its interface with the substrate, was firstly characterized by TEM. Based on this, the influence of the change of the interface state on the Hall carrier concentration and the mobility is obtained by using the Hall effect test. The results show that during the annealing process, the film and substrate are in close contact by diffusion, so that the alloy film has high carrier concentration and carrier mobility at the same time. Finally, a newly proposed band model is used to explain the effect of observed interface variations on the conductivity.