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为实现TSV硅衬底表面微粗糙度及去除速率的优化,对影响TSV硅衬底精抛后表面微粗糙度的关键因素——抛光液组分的作用进行分析。采用正交实验方法进行精抛液组分(包括有机胺碱、螯合剂、磨料和活性剂)配比控制的组合实验。实验结果表明,抛光液组分中活性剂体积分数对CMP过程中硅衬底片表面微粗糙度及去除速率的影响最为显著。优化抛光液组分配比条件下,CMP后硅衬底表面微粗糙度可有效降到0.272 nm(10μm×10μm),去除速率仍可达到0.538μm/min。将优化后的抛光液与生产线上普遍采用的某国际商用抛光液进行对比,在抛光速率基本一致的条件下,粗糙度有效降低50%。
In order to optimize the surface micro-roughness and removal rate of TSV silicon substrate, the effect of polishing liquid component, which is the key factor affecting the surface micro-roughness of TSV silicon substrate, was analyzed. Orthogonal experimental method was used to carry out the combination experiment of the ratio control of the components of polishing liquid (including organic amine base, chelating agent, abrasive and active agent). The experimental results show that the volume fraction of active agent in polishing solution has the most significant effect on the micro-roughness and removal rate of silicon substrate during CMP. Under the conditions of optimized polishing solution composition, the micro-roughness of silicon substrate can be effectively reduced to 0.272 nm (10μm × 10μm) after CMP, and the removal rate can still reach 0.538μm / min. The optimized polishing solution is compared with some international commercial polishing solution commonly used in the production line, and the roughness is effectively reduced by 50% under the condition that the polishing rate is basically the same.