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为分析量子环纳米材料的电子结构特性,在有效质量包络函数理论框架内,通过求解单带薛定谔方程,计算了在无磁场和有磁场时,InAs/GaAs二维量子环中电子的基态能级,分析了能级随量子环内半径、外半径、平均半径和宽度的变化.计算及分析结果表明,垂直于量子环平面的磁场对提高电子基态能量有明显效果;此外,磁场还会减小能级对量子环外半径的依赖关系,即当外半径超过某一临界值时,能级不再发生变化.
In order to analyze the electronic structure properties of quantum ring nanomaterials, the ground state energy of the two-dimensional quantum ring in InAs / GaAs is calculated in the absence of magnetic field and magnetic field by solving the single-band Schrödinger equation within the framework of the effective mass envelope function theory The energy level changes with the radius, the outer radius, the average radius and the width of the quantum ring.The results of calculation and analysis show that the magnetic field perpendicular to the plane of the quantum ring has a significant effect on improving the ground state energy of the electron. In addition, The dependence of the small energy level on the outer radius of the quantum ring does not change when the outer radius exceeds a certain critical value.