Transparent conducting oxides CdIn2O4 thin films were prepared by radio-frequenc y reactive sputtering from a Cd-In alloy target in Ar+O2 atmosphere. By transmis sion spectrum and Hall measurement for different samples prepared at different s ubstrate temperatures, it could be found that the carrier concentration would in crease with the decrease of substrate temperature, but absorption edge showed an abrupt variation from a blue shift to a red shift. Theoretically, the paper for mulated the effect of high-density point defects on band structures; it embodied the formation of band tailing, Burstein-Moss shift and band-gap narrowing. The density of holes will influence the magnitude of optical band gap and transmitta nce of light. Since extrapolation method does not fit degenerate semiconductor m aterials, a more accurate method of obtaining optical band gap is curve fitting. In addition, ionized impurities scattering is the main damping mechanism of the free electrons in CdIn2O4 films, the density of ionized impurities induced by a ltering substrate temperature will affect the carriers mobility. Transparent conducting oxides CdIn2O4 thin films were prepared by radio-frequenc y reactive sputtering from a Cd-In alloy target in Ar + O2 atmosphere. By transmis sion spectrum and Hall measurement for different samples prepared at different s ubstrate temperatures, it could be found that the carrier concentration would in crease with the decrease of substrate temperature, but absorption edge showed an abrupt variation from a blue shift to a red shift. Theoretically, the paper for mulated the effect of high-density point defects on band structures; formation of band tailing, Burstein-Moss shift and band-gap narrowing. The density of holes will influence the magnitude of optical band gap and transmitta nce of light. Since extrapolation method does not fit degenerate semiconductor m aterials, a more accurate method of obtaining optical band gap is curve fitting. In addition, ionized impurities scattering is the main damping mechanism of the free electrons in CdIn2O4 films, the density of ionized impurities induced by a ltering substrate temperature will affect the carriers mobility.