本文利用二次离子质谱对GaAs~-AI_xGa_(1-x)As异质结进行了定量深度分析。首先,在对LTE模型中的温度T的物理意义作了进一步探讨的基础上,提出采用相对灵敏度因子结合双定标的LTE模型法,对GaAs-Al_xGa_(1-x)As异质结的元素成份进行定量分析,获得了满意的结果,此外,本文利用Ta_2O_5-Ta标准陡峭界面对SIMS溅射剖面进行弧坑效应修正,得到异质结中元素的深度分布曲线,从而给出异质结中各种元素随深度的浓度分布。 In this paper, the quantitative analysis of the GaAs ~ -AI_xGa_ (1-x) As heterojunction using secondary ion mass spectrometry has been carried out. First of all, based on the further discussion of the physical meaning of the temperature T in the LTE model, the LTE model method with relative sensitivity factor and double calibration is proposed to analyze the physical properties of the GaAs-Al_xGa_ (1-x) As heterojunction In addition, in this paper, we use the Ta_2O_5-Ta standard steep interface to modify the crater effect of SIMS sputtering profile to get the depth profile of the elements in the heterojunctions, Various elements with the concentration of depth distribution.