一、引言未来的微波系统需要高重复性的低成本的 GaAs 场效应管。这些严格的性能要求和这样的系统的苛刻的工作环境使得用目前的制造技术难于大量生产这些器件。为满足性能和成本的要求曾采用了一些材料生长和器件制造上的改革,本文将予以叙述。二、均匀的有源层由于 GaAs MESFET 的夹断电压直接取决于片子加工前有源沟道层厚度和掺杂浓度,在大面积衬底上制造均匀器件,这些材料的均匀性和重复性具有决定性作用。为此,我们发展 I. INTRODUCTION The future microwave system requires high-repetitive low-cost GaAs FETs. These stringent performance requirements and the harsh working environment of such systems make it difficult to mass produce these devices with current manufacturing techniques. In order to meet the requirements of performance and cost, some material growth and device manufacturing reform have been adopted, which will be described in this article. Uniform Active Layer Since the pinch-off voltage of a GaAs MESFET is directly dependent on the active channel layer thickness and doping concentration prior to film processing, a uniform device is fabricated on a large area substrate with uniformity and repeatability of Decisive role. To this end, we develop