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In this work, the thermal conduction property of thermoelectric microwave power sensors is researched. The fabrication of the thermoelectric microwave power sensor consists of a front side and a back side processing using Ga As Monolithic microwave integrated circuit(MMIC) process and MEMS technology. An isolation structure on the front side is designed to prevent the thermal conduction from the resistor to the Coplanar waveguide(CPW). A thin-membrane on the back side is designed to prevent the thermal conduction from the resistor to the substrate. For the microwave power sensor without an isolation structure, the sensitivity is about 0.138, 0.136,0.132, 0.115 and 0.111 m V/m W at 8, 9, 10, 11 and 12 GHz,respectively. For the microwave power sensor with an isolation structure, the sensitivity is about 0.142, 0.139, 0.135,0.117 and 0.115 m V/m W at 8, 9, 10, 11 and 12 GHz, respectively. As a result, the higher thermal conduction efficiency and the higher sensitivity are obtained for the optimized thermoelectric microwave power sensors.
The fabrication of the thermoelectric microwave power sensor consists of a front side and a back side processing using Ga As Monolithic microwave integrated circuit (MMIC) process and MEMS technology. An isolation structure on the front side is designed to prevent the thermal conduction from the resistor to the Coplanar waveguide (CPW). A thin-membrane on the back side is designed to prevent the thermal conduction from the resistor to the substrate. For the microwave power sensor with an isolation structure, the sensitivity is about 0.138, 0.136, 0.132, 0.115 and 0.111 m V / m W at 8, 9, 10, 11 and 12 GHz, respectively. is about 0.142, 0.139, 0.135, 0.171 and 0.115 mV / m W at 8, 9, 10, 11 and 12 GHz, respectively. As a result, the higher thermal conduction efficiency and the higher sensitivity are obtained for the optimized thermoelectric microwave power sensors.