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An organics/metal Schottky diode is fabricated using 3, 4∶9, 10-perylenetetracarboxylic-dianhydride(PTCDA) thin film sandwiched between ITO and Au by simple thermal evaporation technique. The current-voltage(I-V) characteristics are investigated at room temperature in open air. The results show the rectification ratio is in excess of 100. From the capacitance-frequency(C-f) and capacitance-voltage(C-V) measurements, the Schottky barrier height between 0.2～0.3 eV is obtained according to standard Schottky theory.