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Al_xGa_(1-x)As/GaAs材料在高电子迁移率晶体管(HEMT)的应用上已经显示出很好的高频特性。然而,这一系统小导带不连续性(当x=0.3时,△E_c=0.24eV)及较低的二维载流子浓度及饱和速度等因素限制了截止频率的进一步提高和器件应用。而与InP匹配的In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As异质结体系,消除了AlGaAs层,避免了低温持续光电导。且沟道
Al_xGa_ (1-x) As / GaAs materials have shown good high frequency characteristics for high electron mobility transistor (HEMT) applications. However, the small conduction band discontinuity (ΔE_c = 0.24eV for x = 0.3) and the lower two-dimensional carrier concentration and saturation speed limit the further improvement of the cutoff frequency and device applications. The In_ (0.52) Al_ (0.48) As / In_ (0.53) Ga_ (0.47) As heterojunction system matched with InP eliminates the AlGaAs layer and avoids the low temperature continuous photoconductivity. And the channel