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本文运用热脱吸附谱方法(TDS)研究了室温下CH_3OD在Si(Ⅲ)表面上的吸附,对所取得的H_2, HD及D_2的热脱吸附谱进行了分析和比较,并计算出它们的脱吸附能和预指数因子.
In this paper, the adsorption of CH_3OD on Si (Ⅲ) surface at room temperature was studied by thermal desorption spectroscopy (TDS). The thermal desorption spectra of H_2, HD and D_2 obtained were analyzed and compared. Desorption energy and pre-exponential factor.