利用深能级瞬态谱（ＤＬＴＳ）对电子辐照区熔硅中多稳态缺陷进行研究的结果表明。经２ｈ１０００℃温度退火后，观测到在能级中的多稳组态由４０％减少到１０％左右。这一实验结果为多稳态缺陷不是Ｐｓ－Ｃｉ结构，而是Ｅ中心自身在晶场应力下显示多稳态特性的设想提供了有说服力的证明。 The use of deep level transient spectroscopy (DLTS) to study the effects of multi-steady-state defects in molten silicon at electron irradiation. After annealing at 2h1000 ℃, the steady state in the energy level was reduced from 40% to about 10%. The result of this experiment is that the multi-steady-state defect is not a Ps-Ci structure, but rather provides a convincing proof of the assumption that the E-center itself exhibits multi-steady-state properties under crystal field stress.