A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130hm CMOS bulk Si and silicon-on-insulator (SO1) technologies.The effectiveness of lineax energy transfer (LET)with a tilted ion beam at the 130nm technology node is obtained.Tests of tilted angles θ =0°,30° and 60°with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40MeVcm2/mg at normal incidence.Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles.It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ,furthermore the effective LET for SOI is more closely in inverse proportion to cosθcompared to bulk Si,which are also the well known behavior.It is interesting that,if we design the sample in the dual interlocked storage cell approach,the effective LET in bulk Si will look like inversely proportional to cos θ very well,which is also specificaliy explained.