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硅纳米晶量子点是硅发光研究领域最有潜力、最重要的一个研究方向。用热蒸发法在硅片上生长了富含硅纳米晶体的SiO2薄膜,观测到嵌埋于SiO2薄膜中硅纳米晶的较强光致发光谱;室温下在可见光区对该薄膜进行了椭圆偏振光谱测量研究。用有效介质近似(EMA)模型结合洛伦兹色散模型对椭偏参数进行了拟合,得到直径分别约为3 nm和5 nm大小的硅纳米晶在约300~830 nm光谱区的光学常数值。这些数据在硅基微纳光子学器件的研究中具有一定的参考价值。
Silicon nanocrystal quantum dots are the most potential and the most important research direction in the field of silicon luminescence research. SiO2 thin films with silicon nanocrystals were grown on silicon wafers by thermal evaporation. The strong photoluminescence spectrum of silicon nanocrystals embedded in SiO2 thin films was observed. The films were elliptically polarized in the visible region at room temperature Spectroscopic Measurement Research. The ellipsometric parameters were fitted by the effective medium approximation (EMA) model combined with the Lorentzian dispersion model to obtain the optical constants of silicon nanocrystals with diameters of about 3 nm and 5 nm respectively in the spectral range of about 300-830 nm . These data have a certain reference value in the research of silicon-based micro-nano photonic devices.