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利用FEAMG-CZ软件,模拟研究了cusp磁场对称面(定义为0高斯面)与熔体自由表面距离对直拉硅固液界面氧浓度分布的影响。结果表明:随着0高斯面的下移,熔体中的最小氧浓度降低,而固液界面的氧浓度升高,且径向均匀性变差。分析表明,这与熔体自由表面处的Marangoni流有关,抑制该流动有利于熔体中氧的蒸发,从而在自由表面下获得更低氧浓度的熔体,但会阻碍自由表面下方低氧熔体往固液界面的输运。因此,推断当0高斯面位于熔体自由表面下某一位置时,固液界面氧浓度将达到最低。模拟中,该位置位于Hm=0～-0.01m之间。
Using FEAMG-CZ software, the influence of distance between cusp magnetic field symmetry plane (defined as zero Gauss plane) and melt free surface distance on oxygen concentration distribution in Czochralski silicon solid-liquid interface was simulated. The results show that with the 0 Gaussian surface down, the minimum oxygen concentration in the melt decreases while the oxygen concentration at the solid-liquid interface increases and the radial uniformity deteriorates. The analysis shows that this is related to the Marangoni flow at the free surface of the melt. Suppressing the flow facilitates the evaporation of oxygen in the melt, resulting in a lower oxygen concentration of the melt at the free surface but hindering the low oxygen melt below the free surface Body to solid-liquid interface transport. Therefore, it is inferred that when 0 Gauss is located at a position below the free surface of the melt, the oxygen concentration at the solid-liquid interface will be minimized. In the simulation, the position is between Hm = 0 ~ -0.01m.