Zn/Sb复合薄膜材料的制备及其在低温下的热电性能研究

来源 :功能材料与器件学报 | 被引量 : 0次 | 上传用户:wawayu0bell212
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采用磁控溅射的方法,两个单靶依次在Si(100)基底上循环5次溅射制备了Zn/Sb多层复合纳米薄膜,并研究了固定调制周期为40nm时,Zn和Sb的调制比分别为1:1、3:2和4:1的三种情况下,Zn/Sb复合薄膜的Seebeck系数、电导率和功率因子在160K-250K温度范围内随温度的变化情况。采用XRD、AFM对其结构和表面形貌进行分析,发现制备的薄膜表面光滑、致密,无大颗粒,呈现出晶面择优生长的现象。实验结果表明:当调制比为4:1时,Zn/Sb薄膜的功率因子最高,且其最大值达到在174K时的7543.54μW/mK~2,但随着温度的升高,其值迅速的下降,变化趋势和幅度都很明显。 The magnetron sputtering method was used to fabricate Zn / Sb multilayered composite nanofilms by sputtering two Si targets on Si (100) substrate in turn for 5 times. The effects of Zn and Sb Modulation ratio of 1: 1, 3: 2 and 4: 1 respectively, the Seebeck coefficient, conductivity and power factor of Zn / Sb composite films vary with the temperature in the range of 160K-250K. The structure and surface morphology of the films were characterized by XRD and AFM. The results showed that the surface of the prepared films is smooth and dense, with no large particles, showing the preferred growth of crystal plane. The experimental results show that when the modulation ratio is 4: 1, the power factor of Zn / Sb thin film is the highest, and its maximum reaches 7543.54μW / mK ~ 2 at 174K, but its value increases rapidly with the increase of temperature Decline, the trend and magnitude of change are obvious.
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