Formation and growth mechanism of TiC crystal in TiCp/Ti composites

来源 :Transactions of Nonferrous Metals Society of China | 被引量 : 0次 | 上传用户:ty_142857
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Ti C and Ti Al C alloys were prepared using gravity and directional solidification processes. Morphologies of TiC crystal were investigated by using SEM, XRD and EDX. Also, the formation and growth mechanism of TiC crystal have been analyzed on the basis of coordination polyhedron growth unit theory. During solidification of titanium alloys, the coordination polyhedron growth unit is TiC 6. TiC 6 growth units stack in a linking mode of edge to edge and form octahedral TiC crystal with {111} planes as present faces. Although the growing geometry of TiC crystal is decided by its lattice structure, the final morphology of TiC crystal depends on the effects of its growth environment. In solute concentration distribution, the super saturation of C or TiC 6 at the corners of octahedral TiC crystal is much higher than that of edges and faces of octahedral TiC crystal. At these corners the driving force for crystal growth is greater and the interface is instable which contribute to quick stacking rate of growth units at these corners and result in secondary dendrite arms along TiC crystallographic <100> directions. TiC crystal finally grows to be dendrites. Ti C and Ti Al C alloys were prepared using gravity and directional solidification processes. Morphologies of TiC crystals were investigated by using SEM, XRD and EDX. Also, the formation and growth mechanism of TiC crystal have been analyzed on the basis of coordination polyhedron growth unit theory. During solidification of titanium alloys, the coordination polyhedron growth unit is TiC 6. TiC 6 growth units stack in a linking mode of edge to edge and form octahedral TiC crystal with {111} planes as present faces. TiC crystal is decided by its lattice structure, the final morphology of TiC crystal depends on the effects of its growth environment. edges and faces of octahedral TiC crystal. At these corners the driving force for crystal growth is greater and the interface is instable which contribute to quic k stacking rate of growth units at these corners and result in secondary dendrite arms along TiC crystallographic <100> directions. TiC crystal finally grows to be dendrites.
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