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本文通过用扫描俄歇微探针（ＳＡＭ）和二次离子质谱（ＳＩＭＳ）分析了高能氯离子注 入Ｃｕ／Ｓｉ系统，对Ｃｕ薄膜附着力增强效应进行了研究。俄歇深度剖面分析发现，高 能氯离子注入后导致Ｃｕ膜中出现了大量的碳，在Ｃｕ／Ｓｉ界面处存在碳的浓度峰，并 且Ｃ与 Ｓｉ衬底有一定深度的混合，从 ＳＩＭＳ分析结果我们初步推测在 Ｃｕ／Ｓｉ界面上 存在一定量的氧化硅和碳化硅。我们认为这些可能是引起Ｃｕ膜附着力增强的主要因素 之一。文中就Ｃｕ膜中碳的来源提出了与文献不同的观点．
In this paper, Cu / Si system was implanted with high-energy chlorine ions by scanning Auger microprobe (SAM) and secondary ion mass spectrometry (SIMS) to study the adhesion enhancement effect of Cu films. The Auger depth profile analysis showed that a large amount of carbon appeared in the Cu film after the implantation of the high-energy chlorine ion, and the concentration of carbon peak at the Cu / Si interface was present, and the C and Si substrates were mixed to a certain depth. From SIMS analysis results We initially speculated that there is a certain amount of silicon oxide and silicon carbide on the Cu / Si interface. We think that these may be one of the main factors that cause the adhesion of Cu film to increase. In this paper, the source of carbon in Cu film is proposed with different viewpoints from the literature.