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对多壁碳纳米管薄膜的压阻效应进行了研究.实验所用的多壁碳纳米管用热灯丝化学气相沉积法合成,压阻效应用三点弯曲法测量.研究发现:在室温下与500微应变内,原始的多壁碳纳米管薄膜无明显压阻效应,而经化学修饰处理的碳纳米管膜的压阻因子最高可达120左右,大大超过多晶硅(Si)在35℃时的压阻因子30,并且压阻因子与制备方法密切相关.重点讨论了多壁碳纳米管薄膜产生压阻效应的机制.
The piezoresistive effect of multi-walled carbon nanotube films was investigated.The multi-walled carbon nanotubes (MWNTs) used in the experiment were synthesized by hot filament chemical vapor deposition (CVD) and the piezoresistive effect was measured by three-point bending method Within the strain, the original multi-walled carbon nanotube film has no significant piezoresistive effect, while the chemical resistance of the carbon nanotube film has a piezoresistive factor of up to about 120, which greatly exceeds that of the polysilicon (Si) at 35 ° C. Factor of 30, and the piezoresistive factor is closely related to the preparation method, and the mechanism of the piezoresistive effect of multi-walled carbon nanotube films is discussed.