在Ｉｎ－Ｓｎ合金靶反应磁控溅射的情形下，固定基片温度、氧分压、抽速和其它相关条件，仅靠改变溅射电流来沉积一定方阻的ＩＴＯ膜。实验表明：随着工艺过程的进行，溅射电流总要呈现逐渐增加的趋势。本文分析了产生这种现象的种种原因，并指出影响工艺稳定的一个非常重要的因素是Ｉｎ－Ｓｎ合金靶本身。 In the case of target reactive magnetron sputtering of In-Sn alloy, a certain square resistance ITO film is deposited by changing the sputtering current only by fixing the substrate temperature, oxygen partial pressure, pumping speed and other related conditions. Experiments show that: with the progress of the process, the sputtering current tends to show a gradual increase in the trend. This paper analyzes the reasons for this phenomenon and points out that a very important factor that influences the process stability is the In-Sn alloy target itself.