【摘 要】
：
The Si_3N_4 thin film is prepared by MWECR-PECVD at different deposition tem-perature and the structure of the Si_3N_4 thin film is investigated. The results i
【机 构】
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School of Life Science & Technology, Xi'an Jiaotong University,Xi'an 710049, China,School of Physics
【出 处】
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Plasma Science & Technology
论文部分内容阅读
The Si_3N_4 thin film is prepared by MWECR-PECVD at different deposition tem-perature and the structure of the Si_3N_4 thin film is investigated. The results indicate that thestructure of the Si_3N_4 thin film prepared at low deposition temperature is in the amorphousphase. However, when the deposition temperature increases to 280℃, the Si_3N_4 thin film changesto crystalline α-Si_3N_4. With a further increase of the deposition temperature, the grain of theSi_3N_4 thin film becomes more fine, uniform and flat. XRD analysis shows that the structure ofthe Si_3N_4 thin film prepared at 280℃ is of a crystalline structure.
The results indicate that the structure of the Si_3N_4 thin film is prepared by low deposition temperature is in the amorphous phase. However, when The deposition temperature increases to 280 ° C, the Si_3N_4 thin film changesto crystalline α-Si_3N_4. With a further increase of the deposition temperature, the grain of the Si_3N_4 thin film becomes more fine, uniform and flat. XRD analysis shows that the structure of the Si_3N_4 thin film prepared at 280 ℃ is of a crystalline structure.
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