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采用射频磁控溅射法在功率用半导体散热片Mo上制备了不同本底真空度的Ru薄膜,利用能谱仪、X射线衍射仪、纳米划痕仪及电化学工作站等仪器研究了本底真空度对Ru薄膜化学成分、微观结构、膜基结合力及耐蚀性能的影响。结果表明,随着本底真空度的降低,Ru薄膜中氧含量逐渐降低,当本底真空度为6.0×10-4Pa时,薄膜中氧含量为0%(原子分数);当本底真空度为6.0×10-2Pa时,薄膜两相共存,即hcp-Ru+fcc-RuO_2,此时,薄膜中RuO_2的相对质量分数约为13.7%;随着本底真空度的降低,薄膜中fcc-RuO_2相对质量分数逐渐减少,当本底真空度为6.0×10-4Pa时,薄膜中fcc-RuO_2相消失,为hcp-Ru单一相结构;受RuO_2相的影响,薄膜晶粒尺寸及膜基结合力随本底真空度的降低而逐渐增加。研究表明,在3.5%Na Cl溶液,本底真空度为6.0×10-4Pa的Ru薄膜耐蚀性能优于Mo衬底。
The Ru thin films with different background vacuum were prepared by RF magnetron sputtering on power semiconductor heat sink Mo. The background of the substrate was studied by using EDS, X-ray diffraction, nano-scratch tester and electrochemical workstation. Effect of Vacuum Degree on Chemical Composition, Microstructure, Cohesion and Corrosion Resistance of Ru Films. The results show that with the reduction of background vacuum, the content of oxygen in Ru film gradually decreases. When the background vacuum is 6.0 × 10-4Pa, the oxygen content in the film is 0% (atomic fraction). When the background vacuum Is 6.0 × 10-2Pa, the two films coexist, ie, hcp-Ru + fcc-RuO_2. At this time, the relative mass fraction of RuO_2 in the film is about 13.7%. With the decrease of the background vacuum, the fcc- The relative mass fraction of RuO_2 decreases gradually. When the background vacuum degree is 6.0 × 10-4 Pa, the fcc-RuO_2 phase disappears in the film, which is the single phase structure of hcp-Ru. Influenced by the RuO_2 phase, the grain size and film- The force gradually increases as the background vacuum decreases. The results show that in 3.5% NaCl solution, the corrosion resistance of Ru film with a background vacuum of 6.0 × 10-4 Pa is better than Mo substrate.