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用电子能量损失谱证实了,在超高真空中用氩离子刻蚀所获得的 InAs(111)和 InSb(111)清洁表面上会形成In岛.而生成In岛的容易程度按InP、IuAs、InSb的次序递减.
It was confirmed by electron energy loss spectroscopy that the In islands were formed on the clean surfaces of InAs (111) and InSb (111) obtained by argon ion etching in an ultra-high vacuum, and the ease of generating In islands was determined by InP, IuAs, InSb order of decreasing.