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在包括了更多的物理效应基础上，本文提出了一个新的多晶硅发射区晶体管的解析模型．把物理参数分为与多晶／单晶硅界面有关的界面物理参数和与纵向结构有关的纵向结构参数，建立了载流子传输机理的特征符号表示系统，给出了晶体管重要特性参数的解析表达式．应用这个模型详细分析了电流增益与两类物理参数之间的关系，并与部分实验结果进行了比较，得到了有关改善ＲＣＡ器件，ＨＦ器件和界面氧化层大面积破裂器件的电流增益的结论．
Based on the inclusion of more physical effects, this paper presents a new analytical model of polysilicon emitter transistor. The physical parameters are divided into the interface physical parameters related to the polycrystalline / monocrystalline silicon interface and the longitudinal structural parameters related to the longitudinal structure, and the symbolic representation system of the carrier transport mechanism is established. The analysis of the important characteristic parameters of the transistor is given expression. The model is used to analyze the relationship between current gain and two types of physical parameters in detail. The results are compared with some experimental results, and the conclusion about improving the current gain of RCA device, HF device and interfacial oxide large area cracked device is obtained.