一、引言非晶态半导体电编写,电擦除唯读存贮器(Electrical Erasable Programable Read OnlyMemory—EEPROM)具有低功耗、非易消性,电可改写、可靠性高,特别是读出速度快(小于20ns)等特点。因而它为电子计算机的发展提供了一种新型的存贮器件。非晶半导体存贮器的存贮基本原理:Te-Gr系非晶半导体的某些组成薄膜在特定的电脉冲作用下能稳定地实现其从非晶态→晶态,晶态→非晶态的相变,而且当它处于非晶态 I. INTRODUCTION Electrical Erasable Programable Read Only Memory (EEPROM) with low power consumption, non-erasion, electrically rewritable, high reliability, especially read speed Fast (less than 20ns) and other characteristics. Therefore, it provides a new type of storage device for the development of electronic computers. Amorphous semiconductor memory storage basic principle: Some Te-Gr amorphous semiconductor thin film under the action of a specific electrical pulse can be stable to achieve its amorphous → crystalline, crystalline → amorphous Of the phase change, but also when it is amorphous