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本文通过3～5μm多元光导器件的制备和实验,探讨了器件平均电阻R_D与材料电阻率ρ的关系,对器件和材料之间出现的不对应性进行了分析和研究。1.前言器件阻值影响到表征器件优劣的重要参数——探测率D。我们在制备3～5μm碲镉汞(以下简称CMT)12元光导器件的实践中,发现用固态再结晶N型CMT材料制成的器件,平均电阻R_D与材料电阻率ρ有对应关系的往往有较好的性能。而70%以上的器件,
In this paper, the relationship between device average resistance R_D and material resistivity ρ is discussed through the preparation and experiment of 3 ~ 5μm multi-photoconductive device, and the incompatibility between device and material is analyzed and studied. 1. Introduction Device resistance affects the quality of the device to characterize an important parameter - detection rate. We in the preparation of 3 ~ 5μm HgCdTe 12 yuan photoconductive device practice and found solid state recrystallization N-type CMT materials made of devices, the average resistance R_D and the material resistivity ρ there is a relationship between the corresponding Better performance. While more than 70% of the devices,