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本文介绍一种高灵敏度光触发晶闸管的结构特点及关键的生产工艺,并对该器件进行了理论分析和主要参数的计算机辅助设计,提出了带有薄n层的台阶形光敏门极结构可使器件获得较高的光触发灵敏度和较好的触发灵敏度与dv/dt耐量间的协调关系。研制成功的直径为45mm、容量为500A、耐压为2000V的器件的最小光触发功率小于3mW,dv/dt耐量大于1000V/μs,di/dt耐量大于100A/μs通态峰值压降小于2V。
In this paper, the structural characteristics and key manufacturing processes of a high sensitivity photo-triggered thyristor are introduced. The theoretical analysis of the device and the computer-aided design of the main parameters are given. A stepped n-type photo gate structure with a thin n layer is proposed Device to obtain a higher light trigger sensitivity and better trigger sensitivity and dv / dt tolerance coordination between. Developed devices with a diameter of 45mm, a capacity of 500A and a withstand voltage of 2000V have a minimum optical triggering power of less than 3mW, dv / dt tolerance of greater than 1000V / μs, and di / dt tolerance of greater than 100A / μs on-state peak voltage drop of less than 2V.