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在不同的漏偏压下,研究了钝化和不同场板尺寸AlGaN/GaNHEMT对电流崩塌的抑制能力.实验结果表明,钝化器件对电流崩塌的抑制能力随着漏偏压的升高而显著下降;在高漏偏压下,场板的尺寸对器件抑制崩塌的能力有较大影响,而合适尺寸的场板结构在各个漏偏压下都能够很好的抑制电流崩塌.深入分析发现,场板结构不仅能够抑制虚栅的充电过程,而且提供了放电途径,有利于虚栅的放电,从而抑制电流崩塌.在此基础上,通过建立场板介质对虚栅放电的模型,解释了高漏偏压下场板的尺寸对器件抑制崩塌的能力有较大影响的原因.
Under different drain bias voltages, the passivation and AlGaN / GaN HEMT with different field-plate sizes have been investigated for their ability to inhibit the current collapse. The experimental results show that the passivation device’s ability to inhibit the current collapse is significant with the increase of drain bias voltage The size of the field plate has a greater impact on the ability of the device to suppress the collapse under the high drain bias voltage and the field plate structure of the proper size can well suppress the current collapse under all drain bias voltages.From the analysis, The field plate structure not only suppresses the charging process of the virtual gate, but also provides a discharge path that is conducive to the discharge of the virtual gate and thus suppresses the current collapse. On the basis of this, The reason why the size of the drain bias field plate has a greater impact on the ability of the device to suppress collapse.