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叙述了一种根据空间像匹配原理，进行光学邻近效应校正（ＯＰＣ）的实用方法。此方法采用了三种超高分辨率图形技术：散射条，抗散射条和修饰图形。通过利用顶角“图形工具”，实现了超大规模微处理机随机逻辑芯片的全芯片光学邻近效应校正处理。此方法不仅对于控制疏密线条图形的ＣＤ尺寸有效，而且当与四极离轴照明方法结合使用时，对于提高所有图形的焦深也有明显的效果。在用ｉ线技术制作一块１２５０万个晶体管芯片时，利用此ＯＰＣ方法进行所有关键掩模层图形的加工十分有效。业已生产了２００多块全芯片ＯＰＣ掩模，用于领先的电路制造。
A practical method for OPC (Optical Proximity Correction) based on the matching principle of space image is described. This method uses three kinds of ultra-high resolution graphics technology: scattering bar, anti-scattering bar and modified graphics. Through the use of apex “graphic tools”, the whole chip optical proximity effect correction processing of a very large-scale microprocessor random logic chip is realized. This method is not only effective for controlling the CD dimension of the sparse lines pattern, but also has an obvious effect on increasing the depth of focus of all the patterns when used in combination with the quadrupole off-axis illumination method. When using a i-line technology to produce a 12.5 million transistor chip, the use of this OPC method for all the key mask layer graphics processing is very effective. More than 200 full-chip OPC masks have been produced for use in leading-edge circuit manufacturing.